Absorber thickness dependence on CuInSe2 based solar cells performance using CuIn precursors selenized using H2Se gas
Identifieur interne : 013747 ( Main/Repository ); précédent : 013746; suivant : 013748Absorber thickness dependence on CuInSe2 based solar cells performance using CuIn precursors selenized using H2Se gas
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Abstract
The performance of CuInSe2 based devices as a function of reaction period and CuIn precursors of different thicknesses reacted in a Chemical Vapor deposition (CVD) reactor using H2Se gas at reaction temperature of 350°C is investigated. Progressive number of moles of CuInSe2 and InSe phases in the Selenized CuIn precursors using a kinetic model as well as experimental number of moles calculated from XRD counts is also given. The study compliments efforts in development and operation of CuInSe2 based solar cell commercial scale process by providing fundamental information. The number of moles of CuInSe2 and InSe with reaction period were found to be consistent with device performance with respect to reaction period. Good devices of efficiency greater than 10% can be obtained using an absorber layer with a trace of InSe phase provided the InSe moles approaches zero. Although the time for the precursors to react fully is independent of thickness, there is a limit in solar cell efficiency which can be obtained for each precursor thickness.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Absorber thickness dependence on CuInSe<sub>2</sub> based solar cells performance using CuIn precursors selenized using H<sub>2</sub>Se gas</title><author><name sortKey="Mwabora, J M" uniqKey="Mwabora J">J. M. Mwabora</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Present and permanent address: Department of Physics, University of Nairobi, P O Box 30197</s1><s2>Nairobi</s2><s3>KEN</s3><sZ>1 aut.</sZ></inist:fA14><country>Kenya</country><wicri:noRegion>Nairobi</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Energy Conversion (IEC), University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Newark, DE 19716</wicri:noRegion></affiliation></author><author><name sortKey="Shafarman, W N" uniqKey="Shafarman W">W. N. Shafarman</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Energy Conversion (IEC), University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Newark, DE 19716</wicri:noRegion></affiliation></author><author><name sortKey="Birkmire, R W B" uniqKey="Birkmire R">R. W. B. Birkmire</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Energy Conversion (IEC), University of Delaware</s1><s2>Newark, DE 19716</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Newark, DE 19716</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0251363</idno><date when="2000">2000</date><idno type="stanalyst">PASCAL 02-0251363 INIST</idno><idno type="RBID">Pascal:02-0251363</idno><idno type="wicri:Area/Main/Corpus">00F496</idno><idno type="wicri:Area/Main/Repository">013747</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical vapor deposition</term><term>Copper selenides</term><term>Indium selenides</term><term>Performance</term><term>Solar absorbers</term><term>Solar cell</term><term>Thickness</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term><term>Cuivre séléniure</term><term>Indium séléniure</term><term>Epaisseur</term><term>Performance</term><term>Dépôt chimique phase vapeur</term><term>Absorbeur solaire</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The performance of CuInSe<sub>2</sub> based devices as a function of reaction period and CuIn precursors of different thicknesses reacted in a Chemical Vapor deposition (CVD) reactor using H2Se gas at reaction temperature of 350°C is investigated. Progressive number of moles of CuInSe<sub>2</sub> and InSe phases in the Selenized CuIn precursors using a kinetic model as well as experimental number of moles calculated from XRD counts is also given. The study compliments efforts in development and operation of CuInSe<sub>2</sub> based solar cell commercial scale process by providing fundamental information. The number of moles of CuInSe<sub>2</sub> and InSe with reaction period were found to be consistent with device performance with respect to reaction period. Good devices of efficiency greater than 10% can be obtained using an absorber layer with a trace of InSe phase provided the InSe moles approaches zero. Although the time for the precursors to react fully is independent of thickness, there is a limit in solar cell efficiency which can be obtained for each precursor thickness.</div></front></TEI><inist><standard h6="B"><pA><fA08 i1="01" i2="1" l="ENG"><s1>Absorber thickness dependence on CuInSe<sub>2</sub> based solar cells performance using CuIn precursors selenized using H<sub>2</sub>Se gas</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Renewable energy : the energy for the 21st century : Brighton, 1-7 July 2000 </s1></fA09><fA11 i1="01" i2="1"><s1>MWABORA (J. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHAFARMAN (W. N.)</s1></fA11><fA11 i1="03" i2="1"><s1>BIRKMIRE (R. W. 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All rights reserved.</s1></fA44><fA45><s0>9 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0251363</s0></fA47><fA60><s1>C</s1></fA60><fA61><s0>A</s0></fA61><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The performance of CuInSe<sub>2</sub> based devices as a function of reaction period and CuIn precursors of different thicknesses reacted in a Chemical Vapor deposition (CVD) reactor using H2Se gas at reaction temperature of 350°C is investigated. Progressive number of moles of CuInSe<sub>2</sub> and InSe phases in the Selenized CuIn precursors using a kinetic model as well as experimental number of moles calculated from XRD counts is also given. The study compliments efforts in development and operation of CuInSe<sub>2</sub> based solar cell commercial scale process by providing fundamental information. The number of moles of CuInSe<sub>2</sub> and InSe with reaction period were found to be consistent with device performance with respect to reaction period. Good devices of efficiency greater than 10% can be obtained using an absorber layer with a trace of InSe phase provided the InSe moles approaches zero. 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